Recently power device and communication technology grow fast, the requirement for substrate is getting higher.
Traditional Si substrate couldn’t fulfill the requirement of latest technology, GaN and SiC material become one of the best solution.
GaN and SiC material both possess wide band gap property, it is good for high breakdown and high temperature application, very suitable for high power product.
GaN material also possess high electron mobility property, combine with semi-insulating SiC substrate, it shows great advantage on high frequency communication application.
GaN and SiC are next generation key semiconductor material.