R&D Piloting Cooperation Projects between Industries and Academia at Science Parks achievement highlight. High breakdown voltage, low cost, better quality novel 6 inch bonding substrate!
(SIPA 20180707) GlobalWafers Corporation (Photo1) proudly announce a newly developed GaN on Novel Si on insulator (AIN) (Novel SOI (AIN)) technology for high breakdown enhance mode high electron mobility transsitor (E-mode…