Eyeing SiC and GaN Potential GlobalWafers Builds Compound Semiconductor Research Center with NCTU

Advancements in 5G and electric vehicle technologies are bringing the mounting demands of power semiconductor. GlobalWafers signed contract with National Chiao Tung University (NCTU) on July 27th to establish a compound semiconductor research center to develop the third generation semiconductor materials, including but not limited to 6″~8″ SiC and GaN technology, eyeing to expedite the construction of Taiwan’s compound semiconductor industry chain.

“SiC and GaN are very promising semiconductor materials, and are crucial to the high power, high frequency technologies such as 5G and electric vehicle. All nations consider SiC one of the key materials and technologies in national military and security sector. Taiwan should accommodate the third generation semiconductor in the national technology strategy and fully develop. Establishing compound semiconductor research center with NCTU marks a significant milestone of the strong alliance formed by GWC and NCTU.” said Ming-Kuang Lu (MK Lu), Honorary chairman of Sino-American Silicon Products Inc., the parent company of GlobalWafers.

“NCTU pioneers semiconductor research in Taiwan, for example, the very first silicon wafer was made in NCTU lab. NCTU dedicates in top-notch researches with alumni’s assistance, aiming to achieve top one in three to five domains in five to ten years, becoming a great university. ” said by NCTU Acting President, Sin-Horng Chen. In this research center, NCTU will integrate a wide spectrum of knowledge, combine with GlobalWafers’ unique manufacturing expertise to bring the high throughput, high efficiency of compound semiconductor wafers by innovative production technology with fusion of academic researches and industrial applications so as to produce large-size, high-quality and low-defect wafers

Wide bandgap materials like SiC and GaN leverage many important advantages over traditional silicon technology. These features include high electro-thermal conductivity and fast-switching which reduce conduction and frequency-switching loss, making SiC and GaN capable of heat management and large current traffic and reliable in heat dissipation by offering high power density and superior thermal conductivity. SiC and GaN also demonstrate large charge capability with great saturation velocity. It is believed that SiC and GaN will play a crucial role in the future of power electronics with immense opportunities because they are conveniently exploited to fabricate ultra performance power devices such as 5G, fast charging and electric vehicles. GlobalWafers has been dedicated in the compound semiconductor with leading R&D talents and possesses key patents. With decades of devotion in advanced semiconductors, NCTU has a great reputation in R&D leadership and talents. Both parties’ collaboration in establishing the compound semiconductor institute could integrate and facilitate academic resources into practical applications, elevate Taiwan’s visibility in the compound semiconductor industry chain, and strengthen its leading position and outperform other rivals.