Dr. Vladimir V. Voronkov, was born in Saint Petersburg, Russian Federation, on September 30, 1936, and resided in Italy. He has continuously collaborated with our company since June 19, 1998.Dr. Voronkov received his Physics degree from Moscow University in 1960. Subsequently, in 1967, he earned a PhD (Philosophiae Doctor) from the Moscow University Institute of Crystallography. Following his scientific contributions, he was awarded the title of Doctor of Science by the same institute in 1983.
From 1960 until early 1996, Dr. Voronkov held the position of Chief Research Scientist at the Moscow Rare Metals Institute. He then began collaborating with MEMC at that time, specifically with their R&D center in St. Peters, Missouri, USA, from 1996 to 1998.
Since June 1998, Dr. Voronkov has been an employee of GlobalWafers (GW) Italian company MEMC Electronic Materials SpA, at their Merano facility. During his 28 years with GW-MEMC, he has made exceptionally significant contributions to the development of new products and process improvements, due to his exceptional understanding of the physicochemical mechanisms underlying monocrystalline silicon crystallization and defect formation and control. His ability to develop theoretical concepts and subsequently refine mathematical models for phenomena relating to semiconductor silicon solidification and its evolution during subsequent processing, with a pronounced focus on practical applications, is recognized and appreciated not only within the company and across all group facilities (who regularly utilize his expertise), but also by the international scientific community. This is evidenced by his numerous publications (over 150) and invitations to present at scientific conferences worldwide.
A defining characteristic of Dr. Voronkov, which persists even in his later years, is his creativity, enabling him to conceive entirely novel ideas and to think outside the box, leading to sometimes surprising solutions. Not coincidentally, he is the author or co-author of 107 patents solely during his collaboration with this company.
Regarding his contribution to the technological development, Dr. Voronkov actively participated in numerous project teams over the years, collaborating on innovative solutions for new product development and the enhancement of productivity and efficiency in silicon monocrystal growth processes. With his expertise and authority, he also effectively communicated new technologies to clients, fostering market acceptance and thus supporting the competitiveness of our Company in the highly challenging semiconductor silicon market.
Dr. Voronkov is also highly valued for his communication skills and ability to clearly explain even the most difficult concepts, extracting and illustrating the essential aspects of inherently complex issues. Throughout the years, he has consistently been willing to share his knowledge, both through informal discussions and by preparing and delivering seminars to internal technical personnel, and assisting in problem-solving, including the analysis of experimental data and providing prompt, comprehensive technical reports as needed.
His humanity, generosity, kindness, and sense of humor have encouraged engineers, even the less experienced, to readily seek his assistance, thus contributing to the professional development of younger generations within the company.
During his years in Merano, Dr. Voronkov and his wife have become fully integrated into the local community, participating in company social activities and achieving fluency in Italian, in addition to his excellent English proficiency.
Despite his advanced age, Dr. Voronkov continued his scientific output, which is valued both within our Company and by the semiconductor scientific community. His reputation has led to numerous requests for consultations from clients utilizing silicon for microelectronics, addressing scientific and technological challenges.
Throughout his professional career, he has received numerous international recognitions. Notably, he was awarded the Frank Prize for Crystal Growth in 2007.
His 25 years of collaboration with this company represent a continuation, with a particular focus on silicon, of his 28 years as Chief Research Scientist at the Moscow Rare Metals Institute, amounting to a remarkable 53 years of scientific activity in applied crystallography.
His exceptional expertise, briefly mentioned above, has led Dr. Voronkov to achieve the highest technical position within the GlobalWafers group, namely Senior Fellow, a position held by only 6 out of 7000 employees (as of the end of 2024).
In recognition of his lifelong dedication, remarkable scientific contributions, and moral integrity, the Italian Republic has decided to posthumously award Dr. Voronkov the prestigious “Stella al Merito del Lavoro”, appointing him as “Mastro del Lavoro” in 2025. This national honor, granted by the President of the Republic upon the proposal of the Minister of Labor, celebrates excellence in labor, innovation, and character. This recognition stands as a tribute not only to Dr. Voronkov’s extraordinary professional achievements but also to the profound legacy he leaves behind.