產品 - 環球晶圓股份有限公司

化合物半導體材料

admin — Fri, 27 Nov 2020 07:25:52 +0000

化合物半導體材料

近來因為電力電子系統以及行動通訊技術的蓬勃發展，對於基板的需求越來越高，傳統矽基板已無法符合最新的技術需求，氮化鎵與碳化矽材料成為最適合的解決方案之一。

這兩個材料皆擁有寬能隙特性，應用上可以展現相當高的崩潰電壓與抗高溫特性，適於應用最新的高功率元件。

氮化鎵材料也擁有高電子飽和遷移率特性，搭配半絕緣碳化矽基板，在高頻通訊元件上也展現出極佳的應用優勢。

氮化鎵與碳化矽為下一世代的關鍵半導體新材料。

〈化合物半導體材料〉這篇文章最早發佈於《環球晶圓股份有限公司》。

SOI晶片

admin — Fri, 27 Nov 2020 07:23:34 +0000

SOI晶片

SOI Wafer

Thick SOI wafers are widely used in power devices and MEMS to achieve high breakdown voltage, low energy consumption and high performance of MEMS. This is possible due to their SOI structure. We use a bonding method in the manufacture of thick SOI wafers and exercise more precise control over the thickness of the SOI layer and the BOX layer. The demand for SOI wafers in leading-edge devices such as intelligent power modulus, which require high breakdown voltage and low energy consumption, is also increasing. More over MEMS made of SOI brings complex 3-D structure such as accelerometer and pressure sensor.

Diameter	≤6", 8"~12"

〈SOI晶片〉這篇文章最早發佈於《環球晶圓股份有限公司》。

退火片

admin — Fri, 27 Nov 2020 07:22:22 +0000

退火片

Annealed Wafer

Hi-WAFER®

Hi-WAFER® (Hydrogen Annealed Wafer) is heat treated in hydrogen ambient, and realized high BMD density which provides gettering ability as well as COP-free zone in the wafers surface region. These properties contributes to have excellent gate oxide quality.

AT-WAFER

AT-WAFER is also an annealed wafer, but heat treated in Argon gas ambient to prevent outdiffusion of dopant from wafer surface and to have flat resistivity profile in depth. AT-WAFER serves the same quality as Hyper Hi-WAFER® in other aspects.

Diameter	8"~12"

〈退火片〉這篇文章最早發佈於《環球晶圓股份有限公司》。

磊晶片

admin — Fri, 27 Nov 2020 07:09:45 +0000

磊晶片

Epitaxial Wafer

Epitaxial wafers are the traditional wafers to achieve surface integrity by putting various thickness epitaxial silicon layers. Thin Epi wafers are commonly used for leading edge MOS devices. Thick Epi or Multi-layered epitaxial wafers are used for the devices mainly to control electric power, and they are contributing to improving the efficiency of energy consumption.

Diameter	8"~12"

〈磊晶片〉這篇文章最早發佈於《環球晶圓股份有限公司》。

矽晶棒

admin — Wed, 20 Nov 2019 04:00:45 +0000

矽晶棒

矽單晶棒為矽元素在特定的晶向上做排列而形成 , 利用摻雜技術可以決定矽單晶棒的種類以及相對應的電阻 ; 我們在所有的產品都可以擁有高純度與高品質。

Diameter	8"~12"

〈矽晶棒〉這篇文章最早發佈於《環球晶圓股份有限公司》。

擴散片

admin — Wed, 20 Nov 2019 02:00:45 +0000

擴散片

透過製程控制將不同特性物質以熱處理的方式由晶片表面擴散到指定深度與濃度

本公司之擴散片已獲得車廠供應鏈認證合格 , 品質深獲肯定

Diameter	3"~6"
Crystal	CZ, MCZ, FZ, NTD
Dopant	Ph, B
Orientation	<100>, <111>
Raw Wafer Resistivity	10^-3 ~ 10⁺³
Thickness	200 ~ 1200µm

〈擴散片〉這篇文章最早發佈於《環球晶圓股份有限公司》。

拋光片

admin — Wed, 20 Nov 2019 00:00:45 +0000

拋光片

拋光片是單面或雙面被拋光成具有原子級平坦度的矽晶片。我們提供的拋光片在平坦度上可滿足各式的的客戶規格。我們的拋光片經常被客戶使用在電力功率控制器件以及積體電路之應用。

Diameter	≤6", 8"~12"

〈拋光片〉這篇文章最早發佈於《環球晶圓股份有限公司》。