產品 - GlobalWafers Co., Ltd. All rights reserved. https://www.sas-globalwafers.com AIOSEO Tue, 09 Jan 2024 02:27:54 +0000 en-US hourly 1 https://wordpress.org/?v=6.6.5 https://www.sas-globalwafers.com/wp-content/uploads/2019/11/cropped-logo-1-1-32x32.png 產品 - GlobalWafers Co., Ltd. All rights reserved. https://www.sas-globalwafers.com 32 32 Annealed Wafer https://www.sas-globalwafers.com/en/products/annealed-wafer-en/ Fri, 27 Nov 2020 07:36:20 +0000 http://globalwafers2.hlmcoltdplus.com/?post_type=products&p=16473 Home Product Annealed Wafer Hi-WAFER® Hi-WAFER® (Hydrogen Annealed Wafer) is heat treated in hydrogen ambient, and realized high BMD density which provides gettering ability as well as COP-free zone in the wafers surface region. These properties contributes to have excellent gate oxide quality.     AT-WAFER    AT-WAFER is also an annealed wafer, but heat […]

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Annealed Wafer

Annealed Wafer

Hi-WAFER®


Hi-WAFER® (Hydrogen Annealed Wafer) is heat treated in hydrogen ambient, and realized high BMD density which provides gettering ability as well as COP-free zone in the wafers surface region. These properties contributes to have excellent gate oxide quality.

 

 

AT-WAFER


 
 

AT-WAFER is also an annealed wafer, but heat treated in Argon gas ambient to prevent outdiffusion of dopant from wafer surface and to have flat resistivity profile in depth. AT-WAFER serves the same quality as Hyper Hi-WAFER® in other aspects.

Diameter ≤6", 8"~12"
〈Annealed Wafer〉這篇文章最早發佈於《GlobalWafers Co., Ltd. All rights reserved.》。]]> Compound Wafer https://www.sas-globalwafers.com/en/products/new-materials-en/ Fri, 27 Nov 2020 07:35:30 +0000 http://globalwafers2.hlmcoltdplus.com/?post_type=products&p=16470 Home Product Compound Wafer Recently power device and communication technology grow fast, the requirement for substrate is getting higher.Traditional Si substrate couldn’t fulfill the requirement of latest technology, GaN and SiC material become one of the best solution.GaN and SiC material both possess wide band gap property, it is good for high breakdown and high […]

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Compound Wafer

Compound Wafer

Recently power device and communication technology grow fast, the requirement for substrate is getting higher.
Traditional Si substrate couldn’t fulfill the requirement of latest technology, GaN and SiC material become one of the best solution.
GaN and SiC material both possess wide band gap property, it is good for high breakdown and high temperature application, very suitable for high power product.
GaN material also possess high electron mobility property, combine with semi-insulating SiC substrate, it shows great advantage on high frequency communication application.
GaN and SiC are next generation key semiconductor material.

〈Compound Wafer〉這篇文章最早發佈於《GlobalWafers Co., Ltd. All rights reserved.》。]]> SOI Wafer https://www.sas-globalwafers.com/en/products/soi-wafer-en/ Fri, 27 Nov 2020 07:34:06 +0000 http://globalwafers2.hlmcoltdplus.com/?post_type=products&p=16466 Home Product SOI Wafer Thick SOI wafers are widely used in power devices and MEMS to achieve high breakdown voltage, low energy consumption and high performance of MEMS. This is possible due to their SOI structure. We use a bonding method in the manufacture of thick SOI wafers and exercise more precise control over the […]

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SOI Wafer

SOI Wafer

Thick SOI wafers are widely used in power devices and MEMS to achieve high breakdown voltage, low energy consumption and high performance of MEMS. This is possible due to their SOI structure. We use a bonding method in the manufacture of thick SOI wafers and exercise more precise control over the thickness of the SOI layer and the BOX layer. The demand for SOI wafers in leading-edge devices such as intelligent power modulus, which require high breakdown voltage and low energy consumption, is also increasing. More over MEMS made of SOI brings complex 3-D structure such as accelerometer and pressure sensor.

Diameter ≤6", 8"~12"
〈SOI Wafer〉這篇文章最早發佈於《GlobalWafers Co., Ltd. All rights reserved.》。]]> Epitaxial Wafer https://www.sas-globalwafers.com/en/products/epitaxial-wafer-en/ Fri, 27 Nov 2020 07:11:12 +0000 http://globalwafers2.hlmcoltdplus.com/?post_type=products&p=16419 Home Product Epitaxial Wafer Epitaxial wafers are the traditional wafers to achieve surface integrity by putting various thickness epitaxial silicon layers. Thin Epi wafers are commonly used for leading edge MOS devices. Thick Epi or Multi-layered epitaxial wafers are used for the devices mainly to control electric power, and they are contributing to improving the […]

〈Epitaxial Wafer〉這篇文章最早發佈於《GlobalWafers Co., Ltd. All rights reserved.》。]]>

Epitaxial Wafer

Epitaxial Wafer

Epitaxial wafers are the traditional wafers to achieve surface integrity by putting various thickness epitaxial silicon layers. Thin Epi wafers are commonly used for leading edge MOS devices. Thick Epi or Multi-layered epitaxial wafers are used for the devices mainly to control electric power, and they are contributing to improving the efficiency of energy consumption.

 


Diameter 8"~12"
〈Epitaxial Wafer〉這篇文章最早發佈於《GlobalWafers Co., Ltd. All rights reserved.》。]]> Silicon Ingot https://www.sas-globalwafers.com/en/products/silicon-ingot/ Wed, 20 Nov 2019 04:00:05 +0000 http://sas-globalwafers2.hlmcoltdapp.com/?post_type=products&p=9880 Home Product Silicon Ingot Ingot is grown for customer specific orientation; by using different dopants the type and resistivity are determined. We provide low impurity and high quality ingots for all kinds of products.

〈Silicon Ingot〉這篇文章最早發佈於《GlobalWafers Co., Ltd. All rights reserved.》。]]>

Silicon Ingot

Silicon Ingot

Ingot is grown for customer specific orientation; by using different dopants the type and resistivity are determined. We provide low impurity and high quality ingots for all kinds of products.
Diameter 8"~12"
〈Silicon Ingot〉這篇文章最早發佈於《GlobalWafers Co., Ltd. All rights reserved.》。]]> Diffusion Wafer https://www.sas-globalwafers.com/en/products/diffusion-wafer/ Wed, 20 Nov 2019 02:00:24 +0000 http://sas-globalwafers2.hlmcoltdapp.com/?post_type=products&p=9889 Home Product Diffused Wafer Via process control we diffuse different chemical properties into specific depth and density from wafer surface with heat treating. Our diffusion wafer has been certified with automobile supply chain due to superior quality.

〈Diffusion Wafer〉這篇文章最早發佈於《GlobalWafers Co., Ltd. All rights reserved.》。]]>

Diffusion Wafer

Diffused Wafer

Via process control we diffuse different chemical properties into specific depth and density from wafer surface with heat treating.

Our diffusion wafer has been certified with automobile supply chain due to superior quality.

Diameter 3"~6"
CrystalCZ, MCZ, FZ, NTD
DopantPh, B
Orientation <100>, <111>
Raw Wafer Resistivity10-3 ~ 10+3
Thickness200 ~ 1200µm
〈Diffusion Wafer〉這篇文章最早發佈於《GlobalWafers Co., Ltd. All rights reserved.》。]]> Polished Wafer https://www.sas-globalwafers.com/en/products/polished-wafer/ Wed, 20 Nov 2019 00:00:05 +0000 http://sas-globalwafers2.hlmcoltdapp.com/?post_type=products&p=9892 Home Product Polished Wafer Polished wafers are with one or both sides polished to an atomic-flat surface. Our polished wafers are superior in flatness that is custom built to meet customer specifications. They are used for electric power control devices and integrated circuit applications by our customers.

〈Polished Wafer〉這篇文章最早發佈於《GlobalWafers Co., Ltd. All rights reserved.》。]]>

Polished Wafer

Polished Wafer

Polished wafers are with one or both sides polished to an atomic-flat surface. Our polished wafers are superior in flatness that is custom built to meet customer specifications. They are used for electric power control devices and integrated circuit applications by our customers.

Diameter ≤6", 8"~12"
〈Polished Wafer〉這篇文章最早發佈於《GlobalWafers Co., Ltd. All rights reserved.》。]]>